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High-Temperature Dynamic Gate Bias (HTDGB) Aging Test System
The High-Temperature Dynamic Gate Bias (HTDGB) Aging Test System is a cutting-edge testing solution addressing the gate reliability challenges of modern power MOSFETs and IGBTs. As device switching speeds continue to increase (especially for wide-bandgap semiconductors), gates endure dynamic stresses such as voltage overshoot and ringing caused by high-speed switching in practical applications. This is more demanding for the robustness of gate oxide dielectrics and interface stability than static bias alone.
Keyword:
High-Temperature Dynamic Gate Bias (HTDGB) Aging Test System
Product Introduction
The High-Temperature Dynamic Gate Bias (HTDGB) Aging Test System is a cutting-edge testing solution addressing the gate reliability challenges of modern power MOSFETs and IGBTs. As device switching speeds continue to increase (especially for wide-bandgap semiconductors), gates endure dynamic stresses such as voltage overshoot and ringing caused by high-speed switching in practical applications. This is more demanding for the robustness of gate oxide dielectrics and interface stability than static bias alone.
Beyond providing traditional high-temperature static gate bias stress, the system features industry-advanced dynamic gate voltage application capability. It can generate complex gate waveforms with frequencies up to MHz level and slew rates up to hundreds of volts per microsecond, accurately reproducing dynamic stress scenarios occurring in actual drive circuits. While continuously applying dynamic stress, the system can periodically interrupt and use narrow-pulse technology to precisely measure drifts of key parameters such as threshold voltage and gate leakage current, avoiding measurement errors caused by self-heating effects.
The system is irreplaceable for evaluating and comparing the dynamic reliability of different gate oxide processes and gate structures, predicting the long-term stability of devices in high-frequency switching applications, and formulating gate drive protection strategies. It is a key R&D tool for developing high-reliability, high-frequency power devices.
Product Features
● Dynamic Gate Voltage Stress: Capable of generating dynamic gate voltage waveforms with high frequency (up to MHz level) and high rise edge (up to hundreds of V/µs), simulating gate ringing and Miller plateau effects during switching processes.
● Bipolar Stress Capability: Supports positive bias (+Vgs), negative bias (-Vgs), and composite stress modes of alternating positive and negative biases, comprehensively evaluating the tolerance of gate oxide.
● Online Parameter Measurement: Periodically and automatically measures drifts of key parameters such as threshold voltage (Vth), gate leakage current (Igss), and transconductance (Gfs) without interrupting stress conditions.
● Narrow-Pulse Test Technology: Integrates a high-precision narrow-pulse measurement unit to avoid the impact of device self-heating on parameter measurement (especially Vth) and obtain real electrical characteristics.
● Intelligent Early Warning and Analysis: The software can real-time track parameter degradation trajectories, predict failure trends, and support data output for special analyses such as Charge Pumping.
Product Parameters
|
Item |
Parameters |
|
Static Gate Voltage Range |
DC ±40V (expandable to ±100V) |
|
Dynamic Gate Voltage Peak Value |
±40V (square wave, triangular wave, custom waveform) |
|
Dynamic Voltage Switching Slew Rate |
Up to >500 V/µs |
|
Dynamic Stress Frequency |
DC to 5MHz |
|
Test Temperature Range |
Room temperature ~ 200℃ (high-temperature chamber) |
|
Parameter Measurement Accuracy |
Vth ±0.5%, Igss measurement lower limit 1pA |
|
Parallel Test Channels |
8/16/32 (optional) |
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Add: Room 3513 World Trade Building No.686 Jiefang Ave Wuhan City China
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