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PMDT Power Device Dynamic Parameter Test System
1：High voltage up to 2000V (maximum expandable to 8kV) 2：Large current up to 2000A (expandable to 6000A) 3：Low parasitic inductance design: <20nH parasitic inductance 4：Safety protection mechanism: Integrated explosion-proof, overcurrent/ overvoltage protection 5：Full-function test coverage: Supports parameters such as DPT, RBSOA, SCSOA, and Qg 6：Automation and intelligence: Automatic switching of load inductance 7：Wide temperature range: Optional high-temperature module (ambient temperature - 200℃) or heat flow meter (-40℃ - 200℃) 8：Compatibility with multiple packages: Custom fixtures available according to test requirements
Keyword:
PMDT Power Device Dynamic Parameter Test System
The PMDT Power Device Dynamic Parameter Test System is specifically designed for dynamic parameter testing of devices such as MOSFETs, IGBTs, and SiC MOSFETs. It can safely and conveniently test the switching delay and power loss of power devices, evaluate the safe operating area (SOA) of devices, verify the short-circuit protection characteristics of devices and drive circuits, and measure the stray inductance of power modules. The equipment can be used not only for power device selection and evaluation but also for the optimal design of drive circuits and power busbars, helping users develop more efficient and reliable power electronic platforms.
- High voltage up to 2000V (maximum expandable to 8kV)
- Large current up to 2000A (expandable to 6000A)
- Low parasitic inductance design: <20nH parasitic inductance
- Safety protection mechanism: Integrated explosion-proof, overcurrent/ overvoltage protection
- Full-function test coverage: Supports parameters such as DPT, RBSOA, SCSOA, and Qg
- Automation and intelligence: Automatic switching of load inductance
- Wide temperature range: Optional high-temperature module (ambient temperature - 200℃) or heat flow meter (-40℃ - 200℃)
- Compatibility with multiple packages: Custom fixtures available according to test requirements
Item | Specification | |
Gate | Forward voltage | 0~30V |
| Reverse voltage | -20~0V (positive and negative voltage difference not exceeding 30V) |
| Gate resistance (RGON/RGOFF) | Range: 0.5-100Ω, Step: 0.5Ω, Manual adjustment |
| Maximum current | 10A |
| Pulse form | Single pulse, double pulse, multi-pulse |
| Pulse width range | 0.1μs-200μs, Resolution: 0.1μs, Accuracy: ±0.1μs |
Drain/Collector | Maximum voltage | 2000V |
| Maximum current | 2000A (DPT), Short-circuit current: 12kA |
Air-core Inductor | Inductance value | 20uH, 50uH, 100uH, 200uH, 500uH (5 adjustable gears) |
| Accuracy | ±10% |
| Switching method | Relay switching |
Temperature Control Device (Optional) | Temperature range | Ambient temperature ~200℃ (high-temperature module) or -40℃ ~200℃ (heat flow meter) |
| Temperature control accuracy | ±2℃ |
System Functions | Test objects | IGBTs, SiC MOSFETs, POWER STACK (power modules) |
| Test items | Turn-on characteristics, turn-off characteristics, reverse recovery characteristics, short-circuit characteristics, gate charge, reverse bias safe operating area (RBSOA), etc. |
| Software functions | Report generation, waveform overlay, curve plotting, automatic load inductance matching, VCE_MAX/IC_MAX safety limits, cycle/single-step control, etc. |
| Stray inductance | <20nH |
| Protection response time | <2μs |
| Safety protection | Overcurrent and overvoltage protection, electric shock and leakage protection, high-voltage interlock, rapid discharge, three-color warning light, emergency stop, etc. |
| System power supply | Single-phase 220V±10%, 50Hz/60Hz, Power: 3000VA |
| Weight | 300kg |
| Dimensions (Length × Width × Height) | 860mm × 900mm × 1841mm |
| Operating ambient temperature | Ambient temperature ~40℃ |
| Warranty period | 1 year |
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Add: Room 3513 World Trade Building No.686 Jiefang Ave Wuhan City China
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